DMG1016UDW
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT363
Dim
A
Min
0.10
Max
0.30
B C
B
C
1.15
2.00
1.35
2.20
D
0.65 Typ
F
H
0.40
1.80
0.45
2.20
H
J
K
0
0.90
0.10
1.00
K
M
L
M
0.25
0.10
0.40
0.22
α
0° 8°
J
D
F
L
All Dimensions in mm
Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
C2
C2
Dimensions Value (in mm)
Z
G
2.5
1.3
Z
G
C1
X
Y
0.42
0.6
C1
1.9
Y
X
C2
0.65
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
8 of 9
www.diodes.com
January 2014
? Diodes Incorporated
相关PDF资料
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相关代理商/技术参数
DMG1016V 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
DMG1016V-7 功能描述:MOSFET MOSFET N-CHANNEL P-CHANNEL SOT-563 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG1023UV 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
DMG1023UV-7 功能描述:MOSFET MOSFET P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG1024UV 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMG1024UV-7 功能描述:MOSFET MOSFET N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG1026UV 制造商:Diodes Incorporated 功能描述:MOSFET NN CH W ESD 60V SOT563 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W ESD, 60V, SOT563 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W ESD, 60V, SOT563; Transistor Polarity:N Channel; Continuous Drain Current Id:410mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:580mW; No. of Pins:6 ;RoHS Compliant: Yes
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